NUMERICAL AND EXPERIMENTAL STUDIES OF BACKGATING IN HIGH ELECTRON MOBILITY TRANSISTORS

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Main Author:	LEE KIN MAN
Other Authors:	ELECTRICAL ENGINEERING
Format:	Theses and Dissertations
Published:	2020
Online Access:	https://scholarbank.nus.edu.sg/handle/10635/172123
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-172123
record_format	dspace
spelling	sg-nus-scholar.10635-1721232020-11-19T13:57:13Z NUMERICAL AND EXPERIMENTAL STUDIES OF BACKGATING IN HIGH ELECTRON MOBILITY TRANSISTORS LEE KIN MAN ELECTRICAL ENGINEERING L. S. TAN S. C. CHOO W. S. LAU Master's MASTER OF ENGINEERING 2020-08-07T09:22:12Z 2020-08-07T09:22:12Z 1995 Thesis LEE KIN MAN (1995). NUMERICAL AND EXPERIMENTAL STUDIES OF BACKGATING IN HIGH ELECTRON MOBILITY TRANSISTORS. ScholarBank@NUS Repository. https://scholarbank.nus.edu.sg/handle/10635/172123 CCK BATCHLOAD 20200814
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	Master's
author2	ELECTRICAL ENGINEERING
author_facet	ELECTRICAL ENGINEERING LEE KIN MAN
format	Theses and Dissertations
author	LEE KIN MAN
spellingShingle	LEE KIN MAN NUMERICAL AND EXPERIMENTAL STUDIES OF BACKGATING IN HIGH ELECTRON MOBILITY TRANSISTORS
author_sort	LEE KIN MAN
title	NUMERICAL AND EXPERIMENTAL STUDIES OF BACKGATING IN HIGH ELECTRON MOBILITY TRANSISTORS
title_short	NUMERICAL AND EXPERIMENTAL STUDIES OF BACKGATING IN HIGH ELECTRON MOBILITY TRANSISTORS
title_full	NUMERICAL AND EXPERIMENTAL STUDIES OF BACKGATING IN HIGH ELECTRON MOBILITY TRANSISTORS
title_fullStr	NUMERICAL AND EXPERIMENTAL STUDIES OF BACKGATING IN HIGH ELECTRON MOBILITY TRANSISTORS
title_full_unstemmed	NUMERICAL AND EXPERIMENTAL STUDIES OF BACKGATING IN HIGH ELECTRON MOBILITY TRANSISTORS
title_sort	numerical and experimental studies of backgating in high electron mobility transistors
publishDate	2020
url	https://scholarbank.nus.edu.sg/handle/10635/172123
_version_	1686108805293670400

NUMERICAL AND EXPERIMENTAL STUDIES OF BACKGATING IN HIGH ELECTRON MOBILITY TRANSISTORS

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