NUMERICAL AND EXPERIMENTAL STUDIES OF BACKGATING IN HIGH ELECTRON MOBILITY TRANSISTORS

NUMERICAL AND EXPERIMENTAL STUDIES OF BACKGATING IN HIGH ELECTRON MOBILITY TRANSISTORS

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Bibliographic Details
Main Author:	LEE KIN MAN
Other Authors:	ELECTRICAL ENGINEERING
Format:	Theses and Dissertations
Published:	2020
Online Access:	https://scholarbank.nus.edu.sg/handle/10635/172123
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Institution:	National University of Singapore

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