Growth and characterization of metamorphic layer structures for high electron mobility transistors

• Main Author: Yuan, Kaihua.
• Other Authors: Radhakrishnan, K.
• Format: Theses and Dissertations
• Published: 2008
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
• Online Access: http://hdl.handle.net/10356/3913
• Institution: Nanyang Technological University

InP-based high electron mobility transistors (HEMTs) have demonstrated superior high frequency and low noise performance. However, high cost, limited size and brittle nature of InP substrate bring difficulties to low-cost and high-volume production. In order to overcome these drawbacks, it is desira...