Growth and characterization of metamorphic layer structures for high electron mobility transistors

Growth and characterization of metamorphic layer structures for high electron mobility transistors

InP-based high electron mobility transistors (HEMTs) have demonstrated superior high frequency and low noise performance. However, high cost, limited size and brittle nature of InP substrate bring difficulties to low-cost and high-volume production. In order to overcome these drawbacks, it is desira...

وصف كامل

محفوظ في:

التفاصيل البيبلوغرافية
المؤلف الرئيسي:	Yuan, Kaihua.
مؤلفون آخرون:	Radhakrishnan, K.
التنسيق:	Theses and Dissertations
منشور في:	2008
الموضوعات:	DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
الوصول للمادة أونلاين:	http://hdl.handle.net/10356/3913
الوسوم:	إضافة وسم لا توجد وسوم, كن أول من يضع وسما على هذه التسجيلة!
المؤسسة:	Nanyang Technological University

مواد مشابهة

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