Growth and characterization of metamorphic layer structures for high electron mobility transistors

• 主要作者: Yuan, Kaihua.
• 其他作者: Radhakrishnan, K.
• 格式: Theses and Dissertations
• 出版: 2008
• 主題: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
• 在線閱讀: http://hdl.handle.net/10356/3913

InP-based high electron mobility transistors (HEMTs) have demonstrated superior high frequency and low noise performance. However, high cost, limited size and brittle nature of InP substrate bring difficulties to low-cost and high-volume production. In order to overcome these drawbacks, it is desira...