Growth and characterization of metamorphic layer structures for high electron mobility transistors

InP-based high electron mobility transistors (HEMTs) have demonstrated superior high frequency and low noise performance. However, high cost, limited size and brittle nature of InP substrate bring difficulties to low-cost and high-volume production. In order to overcome these drawbacks, it is desira...

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Main Author:	Yuan, Kaihua.
Other Authors:	Radhakrishnan, K.
Format:	Theses and Dissertations
Published:	2008
Subjects:	DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Online Access:	http://hdl.handle.net/10356/3913
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Institution:	Nanyang Technological University

id	sg-ntu-dr.10356-3913
record_format	dspace
spelling	sg-ntu-dr.10356-39132023-07-04T16:23:46Z Growth and characterization of metamorphic layer structures for high electron mobility transistors Yuan, Kaihua. Radhakrishnan, K. School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Semiconductors InP-based high electron mobility transistors (HEMTs) have demonstrated superior high frequency and low noise performance. However, high cost, limited size and brittle nature of InP substrate bring difficulties to low-cost and high-volume production. In order to overcome these drawbacks, it is desirable to develop InP-based metamorphic HEMT devices on GaAs substrates. In this case, the compositionally graded metamorphic buffer layers are widely used to accommodate the large lattice mismatch between the GaAs substrate and the top active layers. Doctor of Philosophy (EEE) 2008-09-17T09:40:16Z 2008-09-17T09:40:16Z 2003 2003 Thesis http://hdl.handle.net/10356/3913 Nanyang Technological University application/pdf
institution	Nanyang Technological University
building	NTU Library
continent	Asia
country	Singapore Singapore
content_provider	NTU Library
collection	DR-NTU
topic	DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
spellingShingle	DRNTU::Engineering::Electrical and electronic engineering::Semiconductors Yuan, Kaihua. Growth and characterization of metamorphic layer structures for high electron mobility transistors
description	InP-based high electron mobility transistors (HEMTs) have demonstrated superior high frequency and low noise performance. However, high cost, limited size and brittle nature of InP substrate bring difficulties to low-cost and high-volume production. In order to overcome these drawbacks, it is desirable to develop InP-based metamorphic HEMT devices on GaAs substrates. In this case, the compositionally graded metamorphic buffer layers are widely used to accommodate the large lattice mismatch between the GaAs substrate and the top active layers.
author2	Radhakrishnan, K.
author_facet	Radhakrishnan, K. Yuan, Kaihua.
format	Theses and Dissertations
author	Yuan, Kaihua.
author_sort	Yuan, Kaihua.
title	Growth and characterization of metamorphic layer structures for high electron mobility transistors
title_short	Growth and characterization of metamorphic layer structures for high electron mobility transistors
title_full	Growth and characterization of metamorphic layer structures for high electron mobility transistors
title_fullStr	Growth and characterization of metamorphic layer structures for high electron mobility transistors
title_full_unstemmed	Growth and characterization of metamorphic layer structures for high electron mobility transistors
title_sort	growth and characterization of metamorphic layer structures for high electron mobility transistors
publishDate	2008
url	http://hdl.handle.net/10356/3913
_version_	1772828518288195584

Growth and characterization of metamorphic layer structures for high electron mobility transistors

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