Electronic spin transport in dual-gated bilayer graphene

Electronic spin transport in dual-gated bilayer graphene

10.1038/am.2016.65

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Bibliographic Details
Main Authors: Avsar, A, Vera-Marun, I.J, Tan, J.Y, Koon, G.K.W, Watanabe, K, Taniguchi, T, Adam, S, Ozyilmaz,Barbaros
Other Authors: CENTRE FOR ADVANCED 2D MATERIALS
Format: Article
Published: 2020
Subjects:
Carrier concentration
Magnetic devices
Magnetic resonance
Magnetoresistance
Reconfigurable hardware
Relaxation time
Semiconductor junctions
Substrates
Charge mobilities
Charge neutrality
Comparative studies
Density dependence
Impedance mismatch
Low temperatures
Spin relaxation time
Spin-valve devices
Graphene
Online Access:https://scholarbank.nus.edu.sg/handle/10635/173828
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Institution: National University of Singapore

Internet

https://scholarbank.nus.edu.sg/handle/10635/173828

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