Electronic spin transport in dual-gated bilayer graphene

• Main Authors: Avsar, A, Vera-Marun, I.J, Tan, J.Y, Koon, G.K.W, Watanabe, K, Taniguchi, T, Adam, S, Ozyilmaz,Barbaros
• Other Authors: CENTRE FOR ADVANCED 2D MATERIALS
• Format: Article
• Published: 2020
• Subjects: Carrier concentration; Magnetic devices; Magnetic resonance; Magnetoresistance; Reconfigurable hardware; Relaxation time; Semiconductor junctions; Substrates; Charge mobilities; Charge neutrality; Comparative studies; Density dependence; Impedance mismatch; Low temperatures; Spin relaxation time; Spin-valve devices; Graphene
• Online Access: https://scholarbank.nus.edu.sg/handle/10635/173828
• Institution: National University of Singapore

10.1038/am.2016.65