Electronic spin transport in dual-gated bilayer graphene

• المؤلفون الرئيسيون: Avsar, A, Vera-Marun, I.J, Tan, J.Y, Koon, G.K.W, Watanabe, K, Taniguchi, T, Adam, S, Ozyilmaz,Barbaros
• مؤلفون آخرون: CENTRE FOR ADVANCED 2D MATERIALS
• التنسيق: مقال
• منشور في: 2020
• الموضوعات: Carrier concentration; Magnetic devices; Magnetic resonance; Magnetoresistance; Reconfigurable hardware; Relaxation time; Semiconductor junctions; Substrates; Charge mobilities; Charge neutrality; Comparative studies; Density dependence; Impedance mismatch; Low temperatures; Spin relaxation time; Spin-valve devices; Graphene
• الوصول للمادة أونلاين: https://scholarbank.nus.edu.sg/handle/10635/173828
• المؤسسة: National University of Singapore

10.1038/am.2016.65