Accessing valley degree of freedom in bulk Tin(II) sulfide at room temperature

10.1038/s41467-018-03897-3

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Main Authors: Lin, S, Carvalho, A, Yan, S, Li, R, Kim, S, Rodin, A, Carvalho, L, Chan, E.M, Wang, X, Castro Neto, A.H, Yao, J
Other Authors: CENTRE FOR ADVANCED 2D MATERIALS
Format: Article
Published: Nature Publishing Group 2020
Subjects:
tin
Online Access:https://scholarbank.nus.edu.sg/handle/10635/174230
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spelling sg-nus-scholar.10635-1742302024-11-10T08:08:08Z Accessing valley degree of freedom in bulk Tin(II) sulfide at room temperature Lin, S Carvalho, A Yan, S Li, R Kim, S Rodin, A Carvalho, L Chan, E.M Wang, X Castro Neto, A.H Yao, J CENTRE FOR ADVANCED 2D MATERIALS DEPT OF PHYSICS sulfide tin anisotropy experimental study optical method polarization sulfide temperature effect tin two-dimensional modeling absorption anisotropy Article crystal structure density functional theory electrical parameters electromagnetic radiation energy dispersive X ray spectroscopy oscillation photoluminescence polarization microscopy room temperature scanning electron microscopy surface property temperature dependence valleytronic system volume 10.1038/s41467-018-03897-3 Nature Communications 9 1 1455 2020-09-04T01:50:51Z 2020-09-04T01:50:51Z 2018 Article Lin, S, Carvalho, A, Yan, S, Li, R, Kim, S, Rodin, A, Carvalho, L, Chan, E.M, Wang, X, Castro Neto, A.H, Yao, J (2018). Accessing valley degree of freedom in bulk Tin(II) sulfide at room temperature. Nature Communications 9 (1) : 1455. ScholarBank@NUS Repository. https://doi.org/10.1038/s41467-018-03897-3 2041-1723 https://scholarbank.nus.edu.sg/handle/10635/174230 Nature Publishing Group Unpaywall 20200831
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
topic sulfide
tin
anisotropy
experimental study
optical method
polarization
sulfide
temperature effect
tin
two-dimensional modeling
absorption
anisotropy
Article
crystal structure
density functional theory
electrical parameters
electromagnetic radiation
energy dispersive X ray spectroscopy
oscillation
photoluminescence
polarization microscopy
room temperature
scanning electron microscopy
surface property
temperature dependence
valleytronic system
volume
spellingShingle sulfide
tin
anisotropy
experimental study
optical method
polarization
sulfide
temperature effect
tin
two-dimensional modeling
absorption
anisotropy
Article
crystal structure
density functional theory
electrical parameters
electromagnetic radiation
energy dispersive X ray spectroscopy
oscillation
photoluminescence
polarization microscopy
room temperature
scanning electron microscopy
surface property
temperature dependence
valleytronic system
volume
Lin, S
Carvalho, A
Yan, S
Li, R
Kim, S
Rodin, A
Carvalho, L
Chan, E.M
Wang, X
Castro Neto, A.H
Yao, J
Accessing valley degree of freedom in bulk Tin(II) sulfide at room temperature
description 10.1038/s41467-018-03897-3
author2 CENTRE FOR ADVANCED 2D MATERIALS
author_facet CENTRE FOR ADVANCED 2D MATERIALS
Lin, S
Carvalho, A
Yan, S
Li, R
Kim, S
Rodin, A
Carvalho, L
Chan, E.M
Wang, X
Castro Neto, A.H
Yao, J
format Article
author Lin, S
Carvalho, A
Yan, S
Li, R
Kim, S
Rodin, A
Carvalho, L
Chan, E.M
Wang, X
Castro Neto, A.H
Yao, J
author_sort Lin, S
title Accessing valley degree of freedom in bulk Tin(II) sulfide at room temperature
title_short Accessing valley degree of freedom in bulk Tin(II) sulfide at room temperature
title_full Accessing valley degree of freedom in bulk Tin(II) sulfide at room temperature
title_fullStr Accessing valley degree of freedom in bulk Tin(II) sulfide at room temperature
title_full_unstemmed Accessing valley degree of freedom in bulk Tin(II) sulfide at room temperature
title_sort accessing valley degree of freedom in bulk tin(ii) sulfide at room temperature
publisher Nature Publishing Group
publishDate 2020
url https://scholarbank.nus.edu.sg/handle/10635/174230
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