Accessing valley degree of freedom in bulk Tin(II) sulfide at room temperature
10.1038/s41467-018-03897-3
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2020
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sg-nus-scholar.10635-1742302024-11-10T08:08:08Z Accessing valley degree of freedom in bulk Tin(II) sulfide at room temperature Lin, S Carvalho, A Yan, S Li, R Kim, S Rodin, A Carvalho, L Chan, E.M Wang, X Castro Neto, A.H Yao, J CENTRE FOR ADVANCED 2D MATERIALS DEPT OF PHYSICS sulfide tin anisotropy experimental study optical method polarization sulfide temperature effect tin two-dimensional modeling absorption anisotropy Article crystal structure density functional theory electrical parameters electromagnetic radiation energy dispersive X ray spectroscopy oscillation photoluminescence polarization microscopy room temperature scanning electron microscopy surface property temperature dependence valleytronic system volume 10.1038/s41467-018-03897-3 Nature Communications 9 1 1455 2020-09-04T01:50:51Z 2020-09-04T01:50:51Z 2018 Article Lin, S, Carvalho, A, Yan, S, Li, R, Kim, S, Rodin, A, Carvalho, L, Chan, E.M, Wang, X, Castro Neto, A.H, Yao, J (2018). Accessing valley degree of freedom in bulk Tin(II) sulfide at room temperature. Nature Communications 9 (1) : 1455. ScholarBank@NUS Repository. https://doi.org/10.1038/s41467-018-03897-3 2041-1723 https://scholarbank.nus.edu.sg/handle/10635/174230 Nature Publishing Group Unpaywall 20200831 |
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sulfide tin anisotropy experimental study optical method polarization sulfide temperature effect tin two-dimensional modeling absorption anisotropy Article crystal structure density functional theory electrical parameters electromagnetic radiation energy dispersive X ray spectroscopy oscillation photoluminescence polarization microscopy room temperature scanning electron microscopy surface property temperature dependence valleytronic system volume |
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sulfide tin anisotropy experimental study optical method polarization sulfide temperature effect tin two-dimensional modeling absorption anisotropy Article crystal structure density functional theory electrical parameters electromagnetic radiation energy dispersive X ray spectroscopy oscillation photoluminescence polarization microscopy room temperature scanning electron microscopy surface property temperature dependence valleytronic system volume Lin, S Carvalho, A Yan, S Li, R Kim, S Rodin, A Carvalho, L Chan, E.M Wang, X Castro Neto, A.H Yao, J Accessing valley degree of freedom in bulk Tin(II) sulfide at room temperature |
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10.1038/s41467-018-03897-3 |
author2 |
CENTRE FOR ADVANCED 2D MATERIALS |
author_facet |
CENTRE FOR ADVANCED 2D MATERIALS Lin, S Carvalho, A Yan, S Li, R Kim, S Rodin, A Carvalho, L Chan, E.M Wang, X Castro Neto, A.H Yao, J |
format |
Article |
author |
Lin, S Carvalho, A Yan, S Li, R Kim, S Rodin, A Carvalho, L Chan, E.M Wang, X Castro Neto, A.H Yao, J |
author_sort |
Lin, S |
title |
Accessing valley degree of freedom in bulk Tin(II) sulfide at room temperature |
title_short |
Accessing valley degree of freedom in bulk Tin(II) sulfide at room temperature |
title_full |
Accessing valley degree of freedom in bulk Tin(II) sulfide at room temperature |
title_fullStr |
Accessing valley degree of freedom in bulk Tin(II) sulfide at room temperature |
title_full_unstemmed |
Accessing valley degree of freedom in bulk Tin(II) sulfide at room temperature |
title_sort |
accessing valley degree of freedom in bulk tin(ii) sulfide at room temperature |
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Nature Publishing Group |
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2020 |
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https://scholarbank.nus.edu.sg/handle/10635/174230 |
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1821201498102562816 |