Accessing valley degree of freedom in bulk Tin(II) sulfide at room temperature

10.1038/s41467-018-03897-3

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Bibliographic Details
Main Authors: Lin, S, Carvalho, A, Yan, S, Li, R, Kim, S, Rodin, A, Carvalho, L, Chan, E.M, Wang, X, Castro Neto, A.H, Yao, J
Other Authors: CENTRE FOR ADVANCED 2D MATERIALS
Format: Article
Published: Nature Publishing Group 2020
Subjects:
tin
Online Access:https://scholarbank.nus.edu.sg/handle/10635/174230
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Institution: National University of Singapore
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