Tuning the conductivity threshold and carrier density of two-dimensional electron gas at oxide interfaces through interface engineering

10.1063/1.4929772

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Main Authors:	Ma, H.J.H, Zeng, S.W, Annadi, A, Huang, Z, Venkatesan, T, Ariando, NUSNNI-Nanocore, National University of Singapore117411, Singapore, Department of Physics, National University of Singapore117542, Singapore
Other Authors:	ELECTRICAL AND COMPUTER ENGINEERING
Format:	Article
Published:	2020
Subjects:	Carrier concentration Electron gas Electronic properties Heterojunctions Ionization of gases Metal insulator boundaries Perovskite Phase interfaces Tuning Critical thickness Electronic reconstruction Interface engineering Metal insulators Multifunctional devices Oxide interfaces Perovskite oxides Two-dimensional electron gas (2DEG) Two dimensional electron gas
Online Access:	https://scholarbank.nus.edu.sg/handle/10635/174635
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-174635
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spelling	sg-nus-scholar.10635-1746352024-11-14T18:18:57Z Tuning the conductivity threshold and carrier density of two-dimensional electron gas at oxide interfaces through interface engineering Ma, H.J.H Zeng, S.W Annadi, A Huang, Z Venkatesan, T Ariando, NUSNNI-Nanocore, National University of Singapore117411, Singapore, Department of Physics, National University of Singapore117542, Singapore ELECTRICAL AND COMPUTER ENGINEERING MATERIALS SCIENCE AND ENGINEERING NUS NANOSCIENCE & NANOTECH INITIATIVE DEPT OF PHYSICS Carrier concentration Electron gas Electronic properties Heterojunctions Ionization of gases Metal insulator boundaries Perovskite Phase interfaces Tuning Critical thickness Electronic reconstruction Interface engineering Metal insulators Multifunctional devices Oxide interfaces Perovskite oxides Two-dimensional electron gas (2DEG) Two dimensional electron gas 10.1063/1.4929772 AIP Advances 5 8 87171 2020-09-08T03:47:55Z 2020-09-08T03:47:55Z 2015 Article Ma, H.J.H, Zeng, S.W, Annadi, A, Huang, Z, Venkatesan, T, Ariando, NUSNNI-Nanocore, National University of Singapore117411, Singapore, Department of Physics, National University of Singapore117542, Singapore (2015). Tuning the conductivity threshold and carrier density of two-dimensional electron gas at oxide interfaces through interface engineering. AIP Advances 5 (8) : 87171. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4929772 2158-3226 https://scholarbank.nus.edu.sg/handle/10635/174635 Unpaywall 20200831
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Carrier concentration Electron gas Electronic properties Heterojunctions Ionization of gases Metal insulator boundaries Perovskite Phase interfaces Tuning Critical thickness Electronic reconstruction Interface engineering Metal insulators Multifunctional devices Oxide interfaces Perovskite oxides Two-dimensional electron gas (2DEG) Two dimensional electron gas
spellingShingle	Carrier concentration Electron gas Electronic properties Heterojunctions Ionization of gases Metal insulator boundaries Perovskite Phase interfaces Tuning Critical thickness Electronic reconstruction Interface engineering Metal insulators Multifunctional devices Oxide interfaces Perovskite oxides Two-dimensional electron gas (2DEG) Two dimensional electron gas Ma, H.J.H Zeng, S.W Annadi, A Huang, Z Venkatesan, T Ariando, NUSNNI-Nanocore, National University of Singapore117411, Singapore, Department of Physics, National University of Singapore117542, Singapore Tuning the conductivity threshold and carrier density of two-dimensional electron gas at oxide interfaces through interface engineering
description	10.1063/1.4929772
author2	ELECTRICAL AND COMPUTER ENGINEERING
author_facet	ELECTRICAL AND COMPUTER ENGINEERING Ma, H.J.H Zeng, S.W Annadi, A Huang, Z Venkatesan, T Ariando, NUSNNI-Nanocore, National University of Singapore117411, Singapore, Department of Physics, National University of Singapore117542, Singapore
format	Article
author	Ma, H.J.H Zeng, S.W Annadi, A Huang, Z Venkatesan, T Ariando, NUSNNI-Nanocore, National University of Singapore117411, Singapore, Department of Physics, National University of Singapore117542, Singapore
author_sort	Ma, H.J.H
title	Tuning the conductivity threshold and carrier density of two-dimensional electron gas at oxide interfaces through interface engineering
title_short	Tuning the conductivity threshold and carrier density of two-dimensional electron gas at oxide interfaces through interface engineering
title_full	Tuning the conductivity threshold and carrier density of two-dimensional electron gas at oxide interfaces through interface engineering
title_fullStr	Tuning the conductivity threshold and carrier density of two-dimensional electron gas at oxide interfaces through interface engineering
title_full_unstemmed	Tuning the conductivity threshold and carrier density of two-dimensional electron gas at oxide interfaces through interface engineering
title_sort	tuning the conductivity threshold and carrier density of two-dimensional electron gas at oxide interfaces through interface engineering
publishDate	2020
url	https://scholarbank.nus.edu.sg/handle/10635/174635
_version_	1821211207678296064

Tuning the conductivity threshold and carrier density of two-dimensional electron gas at oxide interfaces through interface engineering

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