Tuning the conductivity threshold and carrier density of two-dimensional electron gas at oxide interfaces through interface engineering

• المؤلفون الرئيسيون: Ma, H.J.H, Zeng, S.W, Annadi, A, Huang, Z, Venkatesan, T, Ariando, NUSNNI-Nanocore, National University of Singapore117411, Singapore, Department of Physics, National University of Singapore117542, Singapore
• مؤلفون آخرون: ELECTRICAL AND COMPUTER ENGINEERING
• التنسيق: مقال
• منشور في: 2020
• الموضوعات: Carrier concentration; Electron gas; Electronic properties; Heterojunctions; Ionization of gases; Metal insulator boundaries; Perovskite; Phase interfaces; Tuning; Critical thickness; Electronic reconstruction; Interface engineering; Metal insulators; Multifunctional devices; Oxide interfaces; Perovskite oxides; Two-dimensional electron gas (2DEG); Two dimensional electron gas
• الوصول للمادة أونلاين: https://scholarbank.nus.edu.sg/handle/10635/174635
• المؤسسة: National University of Singapore

10.1063/1.4929772