Heteroepitaxial growth of In0.30Ga0.70As high-electron mobility transistor on 200 mm silicon substrate using metamorphic graded buffer

Heteroepitaxial growth of In0.30Ga0.70As high-electron mobility transistor on 200 mm silicon substrate using metamorphic graded buffer

10.1063/1.4961025

Saved in:

書目詳細資料
Main Authors:	Kohen, D, Nguyen, X.S, Yadav, S, Kumar, A, Made, R.I, Heidelberger, C, Gong, X, Lee, K.H, Lee, K.E.K, Yeo, Y.C, Yoon, S.F, Fitzgerald, E.A
其他作者:	ELECTRICAL AND COMPUTER ENGINEERING
格式:	Article
出版:	2020
主題:	Electron mobility Epitaxial growth Field effect transistors Germanium Metallorganic vapor phase epitaxy Organometallics Phase separation Silicon wafers Surface roughness Channel length Compositionally graded buffers Graded buffer High electron mobility transistor (HEMT) Metal-organic vapor phase epitaxy Silicon substrates Strain relaxing Threading dislocation densities High electron mobility transistors
在線閱讀:	https://scholarbank.nus.edu.sg/handle/10635/176123
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

實物特徵
總結:	10.1063/1.4961025