Heteroepitaxial growth of In0.30Ga0.70As high-electron mobility transistor on 200 mm silicon substrate using metamorphic graded buffer

10.1063/1.4961025

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Main Authors:	Kohen, D, Nguyen, X.S, Yadav, S, Kumar, A, Made, R.I, Heidelberger, C, Gong, X, Lee, K.H, Lee, K.E.K, Yeo, Y.C, Yoon, S.F, Fitzgerald, E.A
Other Authors:	ELECTRICAL AND COMPUTER ENGINEERING
Format:	Article
Published:	2020
Subjects:	Electron mobility Epitaxial growth Field effect transistors Germanium Metallorganic vapor phase epitaxy Organometallics Phase separation Silicon wafers Surface roughness Channel length Compositionally graded buffers Graded buffer High electron mobility transistor (HEMT) Metal-organic vapor phase epitaxy Silicon substrates Strain relaxing Threading dislocation densities High electron mobility transistors
Online Access:	https://scholarbank.nus.edu.sg/handle/10635/176123
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-176123
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spelling	sg-nus-scholar.10635-1761232024-11-09T08:51:15Z Heteroepitaxial growth of In0.30Ga0.70As high-electron mobility transistor on 200 mm silicon substrate using metamorphic graded buffer Kohen, D Nguyen, X.S Yadav, S Kumar, A Made, R.I Heidelberger, C Gong, X Lee, K.H Lee, K.E.K Yeo, Y.C Yoon, S.F Fitzgerald, E.A ELECTRICAL AND COMPUTER ENGINEERING Electron mobility Epitaxial growth Field effect transistors Germanium Metallorganic vapor phase epitaxy Organometallics Phase separation Silicon wafers Surface roughness Channel length Compositionally graded buffers Graded buffer High electron mobility transistor (HEMT) Metal-organic vapor phase epitaxy Silicon substrates Strain relaxing Threading dislocation densities High electron mobility transistors 10.1063/1.4961025 AIP Advances 6 8 85106 2020-09-14T08:12:32Z 2020-09-14T08:12:32Z 2016 Article Kohen, D, Nguyen, X.S, Yadav, S, Kumar, A, Made, R.I, Heidelberger, C, Gong, X, Lee, K.H, Lee, K.E.K, Yeo, Y.C, Yoon, S.F, Fitzgerald, E.A (2016). Heteroepitaxial growth of In0.30Ga0.70As high-electron mobility transistor on 200 mm silicon substrate using metamorphic graded buffer. AIP Advances 6 (8) : 85106. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4961025 2158-3226 https://scholarbank.nus.edu.sg/handle/10635/176123 Unpaywall 20200831
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Electron mobility Epitaxial growth Field effect transistors Germanium Metallorganic vapor phase epitaxy Organometallics Phase separation Silicon wafers Surface roughness Channel length Compositionally graded buffers Graded buffer High electron mobility transistor (HEMT) Metal-organic vapor phase epitaxy Silicon substrates Strain relaxing Threading dislocation densities High electron mobility transistors
spellingShingle	Electron mobility Epitaxial growth Field effect transistors Germanium Metallorganic vapor phase epitaxy Organometallics Phase separation Silicon wafers Surface roughness Channel length Compositionally graded buffers Graded buffer High electron mobility transistor (HEMT) Metal-organic vapor phase epitaxy Silicon substrates Strain relaxing Threading dislocation densities High electron mobility transistors Kohen, D Nguyen, X.S Yadav, S Kumar, A Made, R.I Heidelberger, C Gong, X Lee, K.H Lee, K.E.K Yeo, Y.C Yoon, S.F Fitzgerald, E.A Heteroepitaxial growth of In0.30Ga0.70As high-electron mobility transistor on 200 mm silicon substrate using metamorphic graded buffer
description	10.1063/1.4961025
author2	ELECTRICAL AND COMPUTER ENGINEERING
author_facet	ELECTRICAL AND COMPUTER ENGINEERING Kohen, D Nguyen, X.S Yadav, S Kumar, A Made, R.I Heidelberger, C Gong, X Lee, K.H Lee, K.E.K Yeo, Y.C Yoon, S.F Fitzgerald, E.A
format	Article
author	Kohen, D Nguyen, X.S Yadav, S Kumar, A Made, R.I Heidelberger, C Gong, X Lee, K.H Lee, K.E.K Yeo, Y.C Yoon, S.F Fitzgerald, E.A
author_sort	Kohen, D
title	Heteroepitaxial growth of In0.30Ga0.70As high-electron mobility transistor on 200 mm silicon substrate using metamorphic graded buffer
title_short	Heteroepitaxial growth of In0.30Ga0.70As high-electron mobility transistor on 200 mm silicon substrate using metamorphic graded buffer
title_full	Heteroepitaxial growth of In0.30Ga0.70As high-electron mobility transistor on 200 mm silicon substrate using metamorphic graded buffer
title_fullStr	Heteroepitaxial growth of In0.30Ga0.70As high-electron mobility transistor on 200 mm silicon substrate using metamorphic graded buffer
title_full_unstemmed	Heteroepitaxial growth of In0.30Ga0.70As high-electron mobility transistor on 200 mm silicon substrate using metamorphic graded buffer
title_sort	heteroepitaxial growth of in0.30ga0.70as high-electron mobility transistor on 200 mm silicon substrate using metamorphic graded buffer
publishDate	2020
url	https://scholarbank.nus.edu.sg/handle/10635/176123
_version_	1821205878933553152

Heteroepitaxial growth of In0.30Ga0.70As high-electron mobility transistor on 200 mm silicon substrate using metamorphic graded buffer

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