All WSe2 1T1R resistive RAM cell for future monolithic 3D embedded memory integration
10.1038/s41467-019-13176-4
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sg-nus-scholar.10635-1762232024-04-25T03:37:12Z All WSe2 1T1R resistive RAM cell for future monolithic 3D embedded memory integration THEAN VOON YEW, AARON ELECTRICAL AND COMPUTER ENGINEERING 10.1038/s41467-019-13176-4 Nature Communications 10 5201 2020-09-15T07:36:32Z 2020-09-15T07:36:32Z 2019-11-15 Article THEAN VOON YEW, AARON (2019-11-15). All WSe2 1T1R resistive RAM cell for future monolithic 3D embedded memory integration. Nature Communications 10 : 5201. ScholarBank@NUS Repository. https://doi.org/10.1038/s41467-019-13176-4 20411723 https://scholarbank.nus.edu.sg/handle/10635/176223 Nature |
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10.1038/s41467-019-13176-4 |
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ELECTRICAL AND COMPUTER ENGINEERING |
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ELECTRICAL AND COMPUTER ENGINEERING THEAN VOON YEW, AARON |
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THEAN VOON YEW, AARON |
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THEAN VOON YEW, AARON All WSe2 1T1R resistive RAM cell for future monolithic 3D embedded memory integration |
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THEAN VOON YEW, AARON |
title |
All WSe2 1T1R resistive RAM cell for future monolithic 3D embedded memory integration |
title_short |
All WSe2 1T1R resistive RAM cell for future monolithic 3D embedded memory integration |
title_full |
All WSe2 1T1R resistive RAM cell for future monolithic 3D embedded memory integration |
title_fullStr |
All WSe2 1T1R resistive RAM cell for future monolithic 3D embedded memory integration |
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All WSe2 1T1R resistive RAM cell for future monolithic 3D embedded memory integration |
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all wse2 1t1r resistive ram cell for future monolithic 3d embedded memory integration |
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Nature |
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2020 |
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https://scholarbank.nus.edu.sg/handle/10635/176223 |
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