Investigation of polysilicon passivated contact's resilience to potential-induced degradation

Investigation of polysilicon passivated contact's resilience to potential-induced degradation

10.1016/j.solmat.2019.02.038

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Bibliographic Details
Main Authors:	LUO WEI, CHEN NING, KE CANGMING, WANG YAN, ABERLE,ARMIN GERHARD, SEERAM RAMAKRISHNA, SHUBHAM DUTTAGUPTA, KHOO YONG SHENG
Other Authors:	DEPT OF ELECTRICAL & COMPUTER ENGG
Format:	Article
Language:	English
Published:	ELSEVIER SCIENCE BV 2020
Subjects:	Science & Technology Technology Physical Sciences Energy & Fuels Materials Science, Multidisciplinary Physics, Applied Materials Science Physics PV module reliability Potential-induced degradation (PID) Polysilicon-based passivated contact Surface polarization effect PID recovery PID solution SILICON SOLAR-CELLS PHOTOVOLTAIC MODULES EXPLANATION EMITTER
Online Access:	https://scholarbank.nus.edu.sg/handle/10635/176841
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Institution:	National University of Singapore
Language:	English

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