Conductive Atomic Force Microscope Study of Bipolar and Threshold Resistive Switching in 2D Hexagonal Boron Nitride Films

Conductive Atomic Force Microscope Study of Bipolar and Threshold Resistive Switching in 2D Hexagonal Boron Nitride Films

10.1038/s41598-018-21138-x

Saved in:
Bibliographic Details
Main Authors: Ranjan, A, Raghavan, N, O'shea, S.J, Mei, S, Bosman, M, Shubhakar, K, Pey, K.L
Other Authors: MATERIALS SCIENCE AND ENGINEERING
Format: Article
Published: 2020
Online Access:https://scholarbank.nus.edu.sg/handle/10635/177826
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: National University of Singapore

Internet

https://scholarbank.nus.edu.sg/handle/10635/177826

Similar Items