Thermal Effects and Small Signal Modulation of 1.3-?m InAs/GaAs Self-Assembled Quantum-Dot Lasers

Thermal Effects and Small Signal Modulation of 1.3-?m InAs/GaAs Self-Assembled Quantum-Dot Lasers

10.1007/s11671-010-9798-4

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Bibliographic Details
Main Authors: Zhao, H.X, Yoon, S.F, Tong, C.Z, Liu, C.Y, Wang, R, Cao, Q
Other Authors: DEPT OF ELECTRICAL & COMPUTER ENGG
Format: Article
Published: BMC 2020
Subjects:
Bandwidth
III-V semiconductors
Indium arsenide
Molecular beam epitaxy
Nanocrystals
Narrow band gap semiconductors
Quantum dot lasers
Quantum optics
Quantum well lasers
Ridge waveguides
Semiconductor lasers
Semiconductor quantum dots
Temperature
Modulation
Thermal effects
Continuous wave operation
Gain compression factor
High-speed performance
Ridge-waveguide devices
Self-assembled quantum-dot lasers
Small signal modulation
Small signal modulation bandwidth
Wide temperature ranges
Cavity length
Differential gain
InAs/GaAs
K-factor
Modulation bandwidth
Resonance frequencies
Self-assembled
Temperature dependent
Temperature range
Thermal reduction
Thermalization
Online Access:https://scholarbank.nus.edu.sg/handle/10635/178186
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Institution: National University of Singapore
Description
Summary:10.1007/s11671-010-9798-4

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