Band alignment at interfaces of synthetic few-monolayer MoS2 with SiO2 from internal photoemission

Band alignment at interfaces of synthetic few-monolayer MoS2 with SiO2 from internal photoemission

10.1063/1.5002617

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Bibliographic Details
Main Authors:	Shlyakhov, I, Chai, J, Yang, M, Wang, S.J, Afanas'Ev, V.V, Houssa, M, Stesmans, A
Other Authors:	DEPT OF PHYSICS
Format:	Article
Published:	2020
Subjects:	Conduction bands Interfaces (materials) Monolayers Oxide films Photoemission Semiconducting films Silica Valence bands Band alignments Electron bands Electron barrier Interface dipole Internal photoemission Oxide surface Sulfur vapors Silicon compounds
Online Access:	https://scholarbank.nus.edu.sg/handle/10635/182099
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Institution:	National University of Singapore

Description
Summary:	10.1063/1.5002617