Band alignment at interfaces of synthetic few-monolayer MoS2 with SiO2 from internal photoemission

10.1063/1.5002617

Saved in:

Bibliographic Details
Main Authors:	Shlyakhov, I, Chai, J, Yang, M, Wang, S.J, Afanas'Ev, V.V, Houssa, M, Stesmans, A
Other Authors:	DEPT OF PHYSICS
Format:	Article
Published:	2020
Subjects:	Conduction bands Interfaces (materials) Monolayers Oxide films Photoemission Semiconducting films Silica Valence bands Band alignments Electron bands Electron barrier Interface dipole Internal photoemission Oxide surface Sulfur vapors Silicon compounds
Online Access:	https://scholarbank.nus.edu.sg/handle/10635/182099
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore

id	sg-nus-scholar.10635-182099
record_format	dspace
spelling	sg-nus-scholar.10635-1820992024-11-09T02:31:20Z Band alignment at interfaces of synthetic few-monolayer MoS2 with SiO2 from internal photoemission Shlyakhov, I Chai, J Yang, M Wang, S.J Afanas'Ev, V.V Houssa, M Stesmans, A DEPT OF PHYSICS Conduction bands Interfaces (materials) Monolayers Oxide films Photoemission Semiconducting films Silica Valence bands Band alignments Electron bands Electron barrier Interface dipole Internal photoemission Oxide surface Sulfur vapors Silicon compounds 10.1063/1.5002617 APL Materials 6 2 26801 2020-10-30T02:10:50Z 2020-10-30T02:10:50Z 2018 Article Shlyakhov, I, Chai, J, Yang, M, Wang, S.J, Afanas'Ev, V.V, Houssa, M, Stesmans, A (2018). Band alignment at interfaces of synthetic few-monolayer MoS2 with SiO2 from internal photoemission. APL Materials 6 (2) : 26801. ScholarBank@NUS Repository. https://doi.org/10.1063/1.5002617 2166532X https://scholarbank.nus.edu.sg/handle/10635/182099 Attribution 4.0 International http://creativecommons.org/licenses/by/4.0/ Unpaywall 20201031
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Conduction bands Interfaces (materials) Monolayers Oxide films Photoemission Semiconducting films Silica Valence bands Band alignments Electron bands Electron barrier Interface dipole Internal photoemission Oxide surface Sulfur vapors Silicon compounds
spellingShingle	Conduction bands Interfaces (materials) Monolayers Oxide films Photoemission Semiconducting films Silica Valence bands Band alignments Electron bands Electron barrier Interface dipole Internal photoemission Oxide surface Sulfur vapors Silicon compounds Shlyakhov, I Chai, J Yang, M Wang, S.J Afanas'Ev, V.V Houssa, M Stesmans, A Band alignment at interfaces of synthetic few-monolayer MoS2 with SiO2 from internal photoemission
description	10.1063/1.5002617
author2	DEPT OF PHYSICS
author_facet	DEPT OF PHYSICS Shlyakhov, I Chai, J Yang, M Wang, S.J Afanas'Ev, V.V Houssa, M Stesmans, A
format	Article
author	Shlyakhov, I Chai, J Yang, M Wang, S.J Afanas'Ev, V.V Houssa, M Stesmans, A
author_sort	Shlyakhov, I
title	Band alignment at interfaces of synthetic few-monolayer MoS2 with SiO2 from internal photoemission
title_short	Band alignment at interfaces of synthetic few-monolayer MoS2 with SiO2 from internal photoemission
title_full	Band alignment at interfaces of synthetic few-monolayer MoS2 with SiO2 from internal photoemission
title_fullStr	Band alignment at interfaces of synthetic few-monolayer MoS2 with SiO2 from internal photoemission
title_full_unstemmed	Band alignment at interfaces of synthetic few-monolayer MoS2 with SiO2 from internal photoemission
title_sort	band alignment at interfaces of synthetic few-monolayer mos2 with sio2 from internal photoemission
publishDate	2020
url	https://scholarbank.nus.edu.sg/handle/10635/182099
_version_	1821193596916727808

Band alignment at interfaces of synthetic few-monolayer MoS2 with SiO2 from internal photoemission

Similar Items