Band alignment at interfaces of synthetic few-monolayer MoS2 with SiO2 from internal photoemission

• Main Authors: Shlyakhov, I, Chai, J, Yang, M, Wang, S.J, Afanas'Ev, V.V, Houssa, M, Stesmans, A
• Other Authors: DEPT OF PHYSICS
• Format: Article
• Published: 2020
• Subjects: Conduction bands; Interfaces (materials); Monolayers; Oxide films; Photoemission; Semiconducting films; Silica; Valence bands; Band alignments; Electron bands; Electron barrier; Interface dipole; Internal photoemission; Oxide surface; Sulfur vapors; Silicon compounds
• Online Access: https://scholarbank.nus.edu.sg/handle/10635/182099
• Institution: National University of Singapore

10.1063/1.5002617