A Graphene Oxide Quantum Dots Embedded Charge Trapping Memory with Enhanced Memory Window and Data Retention

10.1109/JEDS.2018.2820125

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Bibliographic Details
Main Authors:	Wang, H., Yan, X., Jia, X., Zhang, Z., Ho, C.-H., Lu, C., Zhang, Y., Yang, T., Zhao, J., Zhou, Z., Zhao, M., Ren, D.
Other Authors:	MATERIALS SCIENCE AND ENGINEERING
Format:	Article
Published:	Institute of Electrical and Electronics Engineers Inc. 2021
Subjects:	charge trapping memory data retention property Graphene oxide quantum dots
Online Access:	https://scholarbank.nus.edu.sg/handle/10635/210110
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-210110
record_format	dspace
spelling	sg-nus-scholar.10635-2101102024-04-17T02:41:28Z A Graphene Oxide Quantum Dots Embedded Charge Trapping Memory with Enhanced Memory Window and Data Retention Wang, H. Yan, X. Jia, X. Zhang, Z. Ho, C.-H. Lu, C. Zhang, Y. Yang, T. Zhao, J. Zhou, Z. Zhao, M. Ren, D. MATERIALS SCIENCE AND ENGINEERING charge trapping memory data retention property Graphene oxide quantum dots 10.1109/JEDS.2018.2820125 IEEE Journal of the Electron Devices Society 6 464-467 2021-12-09T05:02:25Z 2021-12-09T05:02:25Z 2018 Article Wang, H., Yan, X., Jia, X., Zhang, Z., Ho, C.-H., Lu, C., Zhang, Y., Yang, T., Zhao, J., Zhou, Z., Zhao, M., Ren, D. (2018). A Graphene Oxide Quantum Dots Embedded Charge Trapping Memory with Enhanced Memory Window and Data Retention. IEEE Journal of the Electron Devices Society 6 : 464-467. ScholarBank@NUS Repository. https://doi.org/10.1109/JEDS.2018.2820125 2168-6734 https://scholarbank.nus.edu.sg/handle/10635/210110 Attribution-NonCommercial-NoDerivatives 4.0 International https://creativecommons.org/licenses/by-nc-nd/4.0/ Institute of Electrical and Electronics Engineers Inc. Scopus OA2018
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	charge trapping memory data retention property Graphene oxide quantum dots
spellingShingle	charge trapping memory data retention property Graphene oxide quantum dots Wang, H. Yan, X. Jia, X. Zhang, Z. Ho, C.-H. Lu, C. Zhang, Y. Yang, T. Zhao, J. Zhou, Z. Zhao, M. Ren, D. A Graphene Oxide Quantum Dots Embedded Charge Trapping Memory with Enhanced Memory Window and Data Retention
description	10.1109/JEDS.2018.2820125
author2	MATERIALS SCIENCE AND ENGINEERING
author_facet	MATERIALS SCIENCE AND ENGINEERING Wang, H. Yan, X. Jia, X. Zhang, Z. Ho, C.-H. Lu, C. Zhang, Y. Yang, T. Zhao, J. Zhou, Z. Zhao, M. Ren, D.
format	Article
author	Wang, H. Yan, X. Jia, X. Zhang, Z. Ho, C.-H. Lu, C. Zhang, Y. Yang, T. Zhao, J. Zhou, Z. Zhao, M. Ren, D.
author_sort	Wang, H.
title	A Graphene Oxide Quantum Dots Embedded Charge Trapping Memory with Enhanced Memory Window and Data Retention
title_short	A Graphene Oxide Quantum Dots Embedded Charge Trapping Memory with Enhanced Memory Window and Data Retention
title_full	A Graphene Oxide Quantum Dots Embedded Charge Trapping Memory with Enhanced Memory Window and Data Retention
title_fullStr	A Graphene Oxide Quantum Dots Embedded Charge Trapping Memory with Enhanced Memory Window and Data Retention
title_full_unstemmed	A Graphene Oxide Quantum Dots Embedded Charge Trapping Memory with Enhanced Memory Window and Data Retention
title_sort	graphene oxide quantum dots embedded charge trapping memory with enhanced memory window and data retention
publisher	Institute of Electrical and Electronics Engineers Inc.
publishDate	2021
url	https://scholarbank.nus.edu.sg/handle/10635/210110
_version_	1800915210212474880

A Graphene Oxide Quantum Dots Embedded Charge Trapping Memory with Enhanced Memory Window and Data Retention

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