Simulation of trapping properties of high κ material as the charge storage layer for flash memory application

Simulation of trapping properties of high κ material as the charge storage layer for flash memory application

10.1016/j.tsf.2005.09.126

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Bibliographic Details
Main Authors: Yeo, Y.N., Wang, Y.Q., Samanta, S.K., Yoo, W.J., Samudra, G., Gao, D., Chong, C.C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Subjects:
High κ
Non-volatile memory
SOHOS
Traps
Online Access:http://scholarbank.nus.edu.sg/handle/10635/84189
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/84189

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