A Graphene Oxide Quantum Dots Embedded Charge Trapping Memory with Enhanced Memory Window and Data Retention

• Main Authors: Wang, H., Yan, X., Jia, X., Zhang, Z., Ho, C.-H., Lu, C., Zhang, Y., Yang, T., Zhao, J., Zhou, Z., Zhao, M., Ren, D.
• Other Authors: MATERIALS SCIENCE AND ENGINEERING
• Format: Article
• Published: Institute of Electrical and Electronics Engineers Inc. 2021
• Subjects: charge trapping memory; data retention property; Graphene oxide quantum dots
• Online Access: https://scholarbank.nus.edu.sg/handle/10635/210110
• Institution: National University of Singapore

10.1109/JEDS.2018.2820125