ADVANCED BACK-END-OF-LINE COMPATIBLE AMORPHOUS INDIUM-GALLIUM-ZINC-OXIDE-BASED TRANSISTORS FOR 3D MONOLITHIC INTEGRATED CIRCUITS

ADVANCED BACK-END-OF-LINE COMPATIBLE AMORPHOUS INDIUM-GALLIUM-ZINC-OXIDE-BASED TRANSISTORS FOR 3D MONOLITHIC INTEGRATED CIRCUITS

Ph.D

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Bibliographic Details
Main Author: HAN KAIZHEN
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Published: 2021
Subjects:
IGZO, MOSFET, Mobility, Short Channel, Nanowire, Digital Etch
Online Access:https://scholarbank.nus.edu.sg/handle/10635/212723
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Institution: National University of Singapore
Description
Summary:Ph.D

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