ADVANCED BACK-END-OF-LINE COMPATIBLE AMORPHOUS INDIUM-GALLIUM-ZINC-OXIDE-BASED TRANSISTORS FOR 3D MONOLITHIC INTEGRATED CIRCUITS

Ph.D

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Bibliographic Details
Main Author:	HAN KAIZHEN
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Published:	2021
Subjects:	IGZO, MOSFET, Mobility, Short Channel, Nanowire, Digital Etch
Online Access:	https://scholarbank.nus.edu.sg/handle/10635/212723
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-212723
record_format	dspace
spelling	sg-nus-scholar.10635-2127232021-12-31T18:01:32Z ADVANCED BACK-END-OF-LINE COMPATIBLE AMORPHOUS INDIUM-GALLIUM-ZINC-OXIDE-BASED TRANSISTORS FOR 3D MONOLITHIC INTEGRATED CIRCUITS HAN KAIZHEN ELECTRICAL & COMPUTER ENGINEERING Gong Xiao IGZO, MOSFET, Mobility, Short Channel, Nanowire, Digital Etch Ph.D DOCTOR OF PHILOSOPHY (FOE) 2021-12-31T18:01:32Z 2021-12-31T18:01:32Z 2021-08-16 HAN KAIZHEN (2021-08-16). ADVANCED BACK-END-OF-LINE COMPATIBLE AMORPHOUS INDIUM-GALLIUM-ZINC-OXIDE-BASED TRANSISTORS FOR 3D MONOLITHIC INTEGRATED CIRCUITS. ScholarBank@NUS Repository. https://scholarbank.nus.edu.sg/handle/10635/212723
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	IGZO, MOSFET, Mobility, Short Channel, Nanowire, Digital Etch
spellingShingle	IGZO, MOSFET, Mobility, Short Channel, Nanowire, Digital Etch HAN KAIZHEN ADVANCED BACK-END-OF-LINE COMPATIBLE AMORPHOUS INDIUM-GALLIUM-ZINC-OXIDE-BASED TRANSISTORS FOR 3D MONOLITHIC INTEGRATED CIRCUITS
description	Ph.D
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING HAN KAIZHEN
author	HAN KAIZHEN
author_sort	HAN KAIZHEN
title	ADVANCED BACK-END-OF-LINE COMPATIBLE AMORPHOUS INDIUM-GALLIUM-ZINC-OXIDE-BASED TRANSISTORS FOR 3D MONOLITHIC INTEGRATED CIRCUITS
title_short	ADVANCED BACK-END-OF-LINE COMPATIBLE AMORPHOUS INDIUM-GALLIUM-ZINC-OXIDE-BASED TRANSISTORS FOR 3D MONOLITHIC INTEGRATED CIRCUITS
title_full	ADVANCED BACK-END-OF-LINE COMPATIBLE AMORPHOUS INDIUM-GALLIUM-ZINC-OXIDE-BASED TRANSISTORS FOR 3D MONOLITHIC INTEGRATED CIRCUITS
title_fullStr	ADVANCED BACK-END-OF-LINE COMPATIBLE AMORPHOUS INDIUM-GALLIUM-ZINC-OXIDE-BASED TRANSISTORS FOR 3D MONOLITHIC INTEGRATED CIRCUITS
title_full_unstemmed	ADVANCED BACK-END-OF-LINE COMPATIBLE AMORPHOUS INDIUM-GALLIUM-ZINC-OXIDE-BASED TRANSISTORS FOR 3D MONOLITHIC INTEGRATED CIRCUITS
title_sort	advanced back-end-of-line compatible amorphous indium-gallium-zinc-oxide-based transistors for 3d monolithic integrated circuits
publishDate	2021
url	https://scholarbank.nus.edu.sg/handle/10635/212723
_version_	1722355177574367232

ADVANCED BACK-END-OF-LINE COMPATIBLE AMORPHOUS INDIUM-GALLIUM-ZINC-OXIDE-BASED TRANSISTORS FOR 3D MONOLITHIC INTEGRATED CIRCUITS

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