Sub-10nm Ultra-thin ZnO Channel FET with Record-High 561 µA/µm ION at VDS 1V, High µ-84 cm2/V-s and1T-1RRAM Memory Cell Demonstration Memory Implications for Energy-Efficient Deep-Learning Computing

Sub-10nm Ultra-thin ZnO Channel FET with Record-High 561 µA/µm ION at VDS 1V, High µ-84 cm2/V-s and1T-1RRAM Memory Cell Demonstration Memory Implications for Energy-Efficient Deep-Learning Computing

10.1109/VLSITechnologyandCir46769.2022.9830250

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Bibliographic Details
Main Authors: Umesh Chand, Mohamed M Sabry Aly, Manohar Lal, Chen Chun-Kuei, Sonu Hooda, Shih-Hao Tsai, Zihang Fang, Hasita Veluri, Aaron Voon-Yew Thean
Other Authors: DEAN'S OFFICE (ENGINEERING)
Format: Conference or Workshop Item
Language:English
Published: IEEE 2022
Online Access:https://scholarbank.nus.edu.sg/handle/10635/232258
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Institution: National University of Singapore
Language: English
Description
Summary:10.1109/VLSITechnologyandCir46769.2022.9830250

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