Sub-10nm Ultra-thin ZnO Channel FET with Record-High 561 µA/µm ION at VDS 1V, High µ-84 cm2/V-s and1T-1RRAM Memory Cell Demonstration Memory Implications for Energy-Efficient Deep-Learning Computing

• Main Authors: Umesh Chand, Mohamed M Sabry Aly, Manohar Lal, Chen Chun-Kuei, Sonu Hooda, Shih-Hao Tsai, Zihang Fang, Hasita Veluri, Aaron Voon-Yew Thean
• Other Authors: DEAN'S OFFICE (ENGINEERING)
• Format: Conference or Workshop Item
• Language: English
• Published: IEEE 2022
• Online Access: https://scholarbank.nus.edu.sg/handle/10635/232258
• Institution: National University of Singapore

10.1109/VLSITechnologyandCir46769.2022.9830250