Sub-10nm Ultra-thin ZnO Channel FET with Record-High 561 µA/µm ION at VDS 1V, High µ-84 cm2/V-s and1T-1RRAM Memory Cell Demonstration Memory Implications for Energy-Efficient Deep-Learning Computing

10.1109/VLSITechnologyandCir46769.2022.9830250

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Main Authors:	Umesh Chand, Mohamed M Sabry Aly, Manohar Lal, Chen Chun-Kuei, Sonu Hooda, Shih-Hao Tsai, Zihang Fang, Hasita Veluri, Aaron Voon-Yew Thean
Other Authors:	DEAN'S OFFICE (ENGINEERING)
Format:	Conference or Workshop Item
Language:	English
Published:	IEEE 2022
Online Access:	https://scholarbank.nus.edu.sg/handle/10635/232258
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Institution:	National University of Singapore
Language:	English

id	sg-nus-scholar.10635-232258
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spelling	sg-nus-scholar.10635-2322582024-04-16T11:52:30Z Sub-10nm Ultra-thin ZnO Channel FET with Record-High 561 µA/µm ION at VDS 1V, High µ-84 cm2/V-s and1T-1RRAM Memory Cell Demonstration Memory Implications for Energy-Efficient Deep-Learning Computing Umesh Chand Mohamed M Sabry Aly Manohar Lal Chen Chun-Kuei Sonu Hooda Shih-Hao Tsai Zihang Fang Hasita Veluri Aaron Voon-Yew Thean DEAN'S OFFICE (ENGINEERING) ELECTRICAL AND COMPUTER ENGINEERING 10.1109/VLSITechnologyandCir46769.2022.9830250 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) 326-327 2022-10-12T01:37:36Z 2022-10-12T01:37:36Z 2022-06-12 Conference Paper Umesh Chand, Mohamed M Sabry Aly, Manohar Lal, Chen Chun-Kuei, Sonu Hooda, Shih-Hao Tsai, Zihang Fang, Hasita Veluri, Aaron Voon-Yew Thean (2022-06-12). Sub-10nm Ultra-thin ZnO Channel FET with Record-High 561 µA/µm ION at VDS 1V, High µ-84 cm2/V-s and1T-1RRAM Memory Cell Demonstration Memory Implications for Energy-Efficient Deep-Learning Computing. 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) : 326-327. ScholarBank@NUS Repository. https://doi.org/10.1109/VLSITechnologyandCir46769.2022.9830250 978-1-6654-9773-2 https://scholarbank.nus.edu.sg/handle/10635/232258 en CC0 1.0 Universal http://creativecommons.org/publicdomain/zero/1.0/ IEEE
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
language	English
description	10.1109/VLSITechnologyandCir46769.2022.9830250
author2	DEAN'S OFFICE (ENGINEERING)
author_facet	DEAN'S OFFICE (ENGINEERING) Umesh Chand Mohamed M Sabry Aly Manohar Lal Chen Chun-Kuei Sonu Hooda Shih-Hao Tsai Zihang Fang Hasita Veluri Aaron Voon-Yew Thean
format	Conference or Workshop Item
author	Umesh Chand Mohamed M Sabry Aly Manohar Lal Chen Chun-Kuei Sonu Hooda Shih-Hao Tsai Zihang Fang Hasita Veluri Aaron Voon-Yew Thean
spellingShingle	Umesh Chand Mohamed M Sabry Aly Manohar Lal Chen Chun-Kuei Sonu Hooda Shih-Hao Tsai Zihang Fang Hasita Veluri Aaron Voon-Yew Thean Sub-10nm Ultra-thin ZnO Channel FET with Record-High 561 µA/µm ION at VDS 1V, High µ-84 cm2/V-s and1T-1RRAM Memory Cell Demonstration Memory Implications for Energy-Efficient Deep-Learning Computing
author_sort	Umesh Chand
title	Sub-10nm Ultra-thin ZnO Channel FET with Record-High 561 µA/µm ION at VDS 1V, High µ-84 cm2/V-s and1T-1RRAM Memory Cell Demonstration Memory Implications for Energy-Efficient Deep-Learning Computing
title_short	Sub-10nm Ultra-thin ZnO Channel FET with Record-High 561 µA/µm ION at VDS 1V, High µ-84 cm2/V-s and1T-1RRAM Memory Cell Demonstration Memory Implications for Energy-Efficient Deep-Learning Computing
title_full	Sub-10nm Ultra-thin ZnO Channel FET with Record-High 561 µA/µm ION at VDS 1V, High µ-84 cm2/V-s and1T-1RRAM Memory Cell Demonstration Memory Implications for Energy-Efficient Deep-Learning Computing
title_fullStr	Sub-10nm Ultra-thin ZnO Channel FET with Record-High 561 µA/µm ION at VDS 1V, High µ-84 cm2/V-s and1T-1RRAM Memory Cell Demonstration Memory Implications for Energy-Efficient Deep-Learning Computing
title_full_unstemmed	Sub-10nm Ultra-thin ZnO Channel FET with Record-High 561 µA/µm ION at VDS 1V, High µ-84 cm2/V-s and1T-1RRAM Memory Cell Demonstration Memory Implications for Energy-Efficient Deep-Learning Computing
title_sort	sub-10nm ultra-thin zno channel fet with record-high 561 µa/µm ion at vds 1v, high µ-84 cm2/v-s and1t-1rram memory cell demonstration memory implications for energy-efficient deep-learning computing
publisher	IEEE
publishDate	2022
url	https://scholarbank.nus.edu.sg/handle/10635/232258
_version_	1800915601445617664

Sub-10nm Ultra-thin ZnO Channel FET with Record-High 561 µA/µm ION at VDS 1V, High µ-84 cm2/V-s and1T-1RRAM Memory Cell Demonstration Memory Implications for Energy-Efficient Deep-Learning Computing

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