Growth of InAs0.32Sb0.68on GaAs using a thin GaInSb buffer and strain superlattice layers

10.1063/5.0045483

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Bibliographic Details
Main Authors:	Tan, Kian Hua, Loke, Wan Khai, Wicaksono, Satrio, Yoon, Soon Fatt
Other Authors:	ELECTRICAL AND COMPUTER ENGINEERING
Format:	Article
Published:	American Institute of Physics Inc. 2022
Online Access:	https://scholarbank.nus.edu.sg/handle/10635/233214
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-233214
record_format	dspace
spelling	sg-nus-scholar.10635-2332142024-11-09T10:43:16Z Growth of InAs0.32Sb0.68on GaAs using a thin GaInSb buffer and strain superlattice layers Tan, Kian Hua Loke, Wan Khai Wicaksono, Satrio Yoon, Soon Fatt ELECTRICAL AND COMPUTER ENGINEERING 10.1063/5.0045483 AIP Advances 11 4 045203 2022-10-13T07:52:34Z 2022-10-13T07:52:34Z 2021-04-01 Article Tan, Kian Hua, Loke, Wan Khai, Wicaksono, Satrio, Yoon, Soon Fatt (2021-04-01). Growth of InAs0.32Sb0.68on GaAs using a thin GaInSb buffer and strain superlattice layers. AIP Advances 11 (4) : 045203. ScholarBank@NUS Repository. https://doi.org/10.1063/5.0045483 2158-3226 https://scholarbank.nus.edu.sg/handle/10635/233214 Attribution 4.0 International https://creativecommons.org/licenses/by/4.0/ American Institute of Physics Inc. Scopus OA2021
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1063/5.0045483
author2	ELECTRICAL AND COMPUTER ENGINEERING
author_facet	ELECTRICAL AND COMPUTER ENGINEERING Tan, Kian Hua Loke, Wan Khai Wicaksono, Satrio Yoon, Soon Fatt
format	Article
author	Tan, Kian Hua Loke, Wan Khai Wicaksono, Satrio Yoon, Soon Fatt
spellingShingle	Tan, Kian Hua Loke, Wan Khai Wicaksono, Satrio Yoon, Soon Fatt Growth of InAs0.32Sb0.68on GaAs using a thin GaInSb buffer and strain superlattice layers
author_sort	Tan, Kian Hua
title	Growth of InAs0.32Sb0.68on GaAs using a thin GaInSb buffer and strain superlattice layers
title_short	Growth of InAs0.32Sb0.68on GaAs using a thin GaInSb buffer and strain superlattice layers
title_full	Growth of InAs0.32Sb0.68on GaAs using a thin GaInSb buffer and strain superlattice layers
title_fullStr	Growth of InAs0.32Sb0.68on GaAs using a thin GaInSb buffer and strain superlattice layers
title_full_unstemmed	Growth of InAs0.32Sb0.68on GaAs using a thin GaInSb buffer and strain superlattice layers
title_sort	growth of inas0.32sb0.68on gaas using a thin gainsb buffer and strain superlattice layers
publisher	American Institute of Physics Inc.
publishDate	2022
url	https://scholarbank.nus.edu.sg/handle/10635/233214
_version_	1821200481190412288

Growth of InAs0.32Sb0.68on GaAs using a thin GaInSb buffer and strain superlattice layers

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