Growth of InAs0.32Sb0.68on GaAs using a thin GaInSb buffer and strain superlattice layers
10.1063/5.0045483
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| Main Authors: | , , , |
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| Other Authors: | |
| Format: | Article |
| Published: |
American Institute of Physics Inc.
2022
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| Online Access: | https://scholarbank.nus.edu.sg/handle/10635/233214 |
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| Institution: | National University of Singapore |