High-Performance Top-Gated and Double-Gated Oxide–Semiconductor Ferroelectric Field-Effect Transistor Enabled by Channel Defect Self-Compensation Effect
10.1109/TED.2023.3242633
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| Format: | Article |
| Language: | English |
| Published: |
IEEE Transactions on Electron Devices
2023
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| Online Access: | https://scholarbank.nus.edu.sg/handle/10635/238258 |
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| Institution: | National University of Singapore |
| Language: | English |