High-Performance Top-Gated and Double-Gated Oxide–Semiconductor Ferroelectric Field-Effect Transistor Enabled by Channel Defect Self-Compensation Effect

10.1109/TED.2023.3242633

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Bibliographic Details
Main Author: ChunKuei CHEN
Other Authors: ELECTRICAL AND COMPUTER ENGINEERING
Format: Article
Language:English
Published: IEEE Transactions on Electron Devices 2023
Online Access:https://scholarbank.nus.edu.sg/handle/10635/238258
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Institution: National University of Singapore
Language: English