High-Performance Top-Gated and Double-Gated Oxide–Semiconductor Ferroelectric Field-Effect Transistor Enabled by Channel Defect Self-Compensation Effect

10.1109/TED.2023.3242633

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Main Author: ChunKuei CHEN
Other Authors: ELECTRICAL AND COMPUTER ENGINEERING
Format: Article
Language:English
Published: IEEE Transactions on Electron Devices 2023
Online Access:https://scholarbank.nus.edu.sg/handle/10635/238258
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Institution: National University of Singapore
Language: English
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spelling sg-nus-scholar.10635-2382582024-04-15T05:56:15Z High-Performance Top-Gated and Double-Gated Oxide–Semiconductor Ferroelectric Field-Effect Transistor Enabled by Channel Defect Self-Compensation Effect ChunKuei CHEN ELECTRICAL AND COMPUTER ENGINEERING 10.1109/TED.2023.3242633 1-8 2023-03-20T02:27:48Z 2023-03-20T02:27:48Z 2023-02-13 Article ChunKuei CHEN (2023-02-13). High-Performance Top-Gated and Double-Gated Oxide–Semiconductor Ferroelectric Field-Effect Transistor Enabled by Channel Defect Self-Compensation Effect : 1-8. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2023.3242633 0018-9383 https://scholarbank.nus.edu.sg/handle/10635/238258 en IEEE Transactions on Electron Devices
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
language English
description 10.1109/TED.2023.3242633
author2 ELECTRICAL AND COMPUTER ENGINEERING
author_facet ELECTRICAL AND COMPUTER ENGINEERING
ChunKuei CHEN
format Article
author ChunKuei CHEN
spellingShingle ChunKuei CHEN
High-Performance Top-Gated and Double-Gated Oxide–Semiconductor Ferroelectric Field-Effect Transistor Enabled by Channel Defect Self-Compensation Effect
author_sort ChunKuei CHEN
title High-Performance Top-Gated and Double-Gated Oxide–Semiconductor Ferroelectric Field-Effect Transistor Enabled by Channel Defect Self-Compensation Effect
title_short High-Performance Top-Gated and Double-Gated Oxide–Semiconductor Ferroelectric Field-Effect Transistor Enabled by Channel Defect Self-Compensation Effect
title_full High-Performance Top-Gated and Double-Gated Oxide–Semiconductor Ferroelectric Field-Effect Transistor Enabled by Channel Defect Self-Compensation Effect
title_fullStr High-Performance Top-Gated and Double-Gated Oxide–Semiconductor Ferroelectric Field-Effect Transistor Enabled by Channel Defect Self-Compensation Effect
title_full_unstemmed High-Performance Top-Gated and Double-Gated Oxide–Semiconductor Ferroelectric Field-Effect Transistor Enabled by Channel Defect Self-Compensation Effect
title_sort high-performance top-gated and double-gated oxide–semiconductor ferroelectric field-effect transistor enabled by channel defect self-compensation effect
publisher IEEE Transactions on Electron Devices
publishDate 2023
url https://scholarbank.nus.edu.sg/handle/10635/238258
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