High-Performance Top-Gated and Double-Gated Oxide–Semiconductor Ferroelectric Field-Effect Transistor Enabled by Channel Defect Self-Compensation Effect
10.1109/TED.2023.3242633
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IEEE Transactions on Electron Devices
2023
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sg-nus-scholar.10635-2382582024-04-15T05:56:15Z High-Performance Top-Gated and Double-Gated Oxide–Semiconductor Ferroelectric Field-Effect Transistor Enabled by Channel Defect Self-Compensation Effect ChunKuei CHEN ELECTRICAL AND COMPUTER ENGINEERING 10.1109/TED.2023.3242633 1-8 2023-03-20T02:27:48Z 2023-03-20T02:27:48Z 2023-02-13 Article ChunKuei CHEN (2023-02-13). High-Performance Top-Gated and Double-Gated Oxide–Semiconductor Ferroelectric Field-Effect Transistor Enabled by Channel Defect Self-Compensation Effect : 1-8. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2023.3242633 0018-9383 https://scholarbank.nus.edu.sg/handle/10635/238258 en IEEE Transactions on Electron Devices |
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10.1109/TED.2023.3242633 |
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ELECTRICAL AND COMPUTER ENGINEERING |
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ELECTRICAL AND COMPUTER ENGINEERING ChunKuei CHEN |
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Article |
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ChunKuei CHEN |
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ChunKuei CHEN High-Performance Top-Gated and Double-Gated Oxide–Semiconductor Ferroelectric Field-Effect Transistor Enabled by Channel Defect Self-Compensation Effect |
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ChunKuei CHEN |
title |
High-Performance Top-Gated and Double-Gated Oxide–Semiconductor Ferroelectric Field-Effect Transistor Enabled by Channel Defect Self-Compensation Effect |
title_short |
High-Performance Top-Gated and Double-Gated Oxide–Semiconductor Ferroelectric Field-Effect Transistor Enabled by Channel Defect Self-Compensation Effect |
title_full |
High-Performance Top-Gated and Double-Gated Oxide–Semiconductor Ferroelectric Field-Effect Transistor Enabled by Channel Defect Self-Compensation Effect |
title_fullStr |
High-Performance Top-Gated and Double-Gated Oxide–Semiconductor Ferroelectric Field-Effect Transistor Enabled by Channel Defect Self-Compensation Effect |
title_full_unstemmed |
High-Performance Top-Gated and Double-Gated Oxide–Semiconductor Ferroelectric Field-Effect Transistor Enabled by Channel Defect Self-Compensation Effect |
title_sort |
high-performance top-gated and double-gated oxide–semiconductor ferroelectric field-effect transistor enabled by channel defect self-compensation effect |
publisher |
IEEE Transactions on Electron Devices |
publishDate |
2023 |
url |
https://scholarbank.nus.edu.sg/handle/10635/238258 |
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