First Demonstration of Ultra-low Dit Top-Gated Ferroelectric Oxide-Semiconductor Memtransistor with Record Performance by Channel Defect Self-Compensation Effect for BEOL-Compatible Non-Volatile Logic Switch

First Demonstration of Ultra-low Dit Top-Gated Ferroelectric Oxide-Semiconductor Memtransistor with Record Performance by Channel Defect Self-Compensation Effect for BEOL-Compatible Non-Volatile Logic Switch

10.1109/IEDM45625.2022.10019440

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Bibliographic Details
Main Authors: Chun-Kuei Chen, Zihang Fang, Sonu Hooda, Manohar Lal, Umesh Chand, Zefeng Xu, Jieming Pan, Shih-Hao Tsai, Evgeny Zamburg, Aaron Voon-Yew Thean
Other Authors: DEPT OF ELECTRICAL & COMPUTER ENGG
Format: Conference or Workshop Item
Language:English
Published: 2022 International Electron Devices Meeting (IEDM) 2023
Online Access:https://scholarbank.nus.edu.sg/handle/10635/238259
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Institution: National University of Singapore
Language: English

Internet

https://scholarbank.nus.edu.sg/handle/10635/238259

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