First Demonstration of Ultra-low Dit Top-Gated Ferroelectric Oxide-Semiconductor Memtransistor with Record Performance by Channel Defect Self-Compensation Effect for BEOL-Compatible Non-Volatile Logic Switch

10.1109/IEDM45625.2022.10019440

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Bibliographic Details
Main Authors:	Chun-Kuei Chen, Zihang Fang, Sonu Hooda, Manohar Lal, Umesh Chand, Zefeng Xu, Jieming Pan, Shih-Hao Tsai, Evgeny Zamburg, Aaron Voon-Yew Thean
Other Authors:	DEPT OF ELECTRICAL & COMPUTER ENGG
Format:	Conference or Workshop Item
Language:	English
Published:	2022 International Electron Devices Meeting (IEDM) 2023
Online Access:	https://scholarbank.nus.edu.sg/handle/10635/238259
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Institution:	National University of Singapore
Language:	English

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spelling	sg-nus-scholar.10635-2382592023-03-20T02:57:19Z First Demonstration of Ultra-low Dit Top-Gated Ferroelectric Oxide-Semiconductor Memtransistor with Record Performance by Channel Defect Self-Compensation Effect for BEOL-Compatible Non-Volatile Logic Switch Chun-Kuei Chen Zihang Fang Sonu Hooda Manohar Lal Umesh Chand Zefeng Xu Jieming Pan Shih-Hao Tsai Evgeny Zamburg Aaron Voon-Yew Thean DEPT OF ELECTRICAL & COMPUTER ENGG 10.1109/IEDM45625.2022.10019440 6.1.1-6.2.4 2023-03-20T02:57:16Z 2023-03-20T02:57:16Z 2023-01-23 Conference Paper Chun-Kuei Chen, Zihang Fang, Sonu Hooda, Manohar Lal, Umesh Chand, Zefeng Xu, Jieming Pan, Shih-Hao Tsai, Evgeny Zamburg, Aaron Voon-Yew Thean (2023-01-23). First Demonstration of Ultra-low Dit Top-Gated Ferroelectric Oxide-Semiconductor Memtransistor with Record Performance by Channel Defect Self-Compensation Effect for BEOL-Compatible Non-Volatile Logic Switch : 6.1.1-6.2.4. ScholarBank@NUS Repository. https://doi.org/10.1109/IEDM45625.2022.10019440 978-1-6654-8959-1 https://scholarbank.nus.edu.sg/handle/10635/238259 en 2022 International Electron Devices Meeting (IEDM)
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
language	English
description	10.1109/IEDM45625.2022.10019440
author2	DEPT OF ELECTRICAL & COMPUTER ENGG
author_facet	DEPT OF ELECTRICAL & COMPUTER ENGG Chun-Kuei Chen Zihang Fang Sonu Hooda Manohar Lal Umesh Chand Zefeng Xu Jieming Pan Shih-Hao Tsai Evgeny Zamburg Aaron Voon-Yew Thean
format	Conference or Workshop Item
author	Chun-Kuei Chen Zihang Fang Sonu Hooda Manohar Lal Umesh Chand Zefeng Xu Jieming Pan Shih-Hao Tsai Evgeny Zamburg Aaron Voon-Yew Thean
spellingShingle	Chun-Kuei Chen Zihang Fang Sonu Hooda Manohar Lal Umesh Chand Zefeng Xu Jieming Pan Shih-Hao Tsai Evgeny Zamburg Aaron Voon-Yew Thean First Demonstration of Ultra-low Dit Top-Gated Ferroelectric Oxide-Semiconductor Memtransistor with Record Performance by Channel Defect Self-Compensation Effect for BEOL-Compatible Non-Volatile Logic Switch
author_sort	Chun-Kuei Chen
title	First Demonstration of Ultra-low Dit Top-Gated Ferroelectric Oxide-Semiconductor Memtransistor with Record Performance by Channel Defect Self-Compensation Effect for BEOL-Compatible Non-Volatile Logic Switch
title_short	First Demonstration of Ultra-low Dit Top-Gated Ferroelectric Oxide-Semiconductor Memtransistor with Record Performance by Channel Defect Self-Compensation Effect for BEOL-Compatible Non-Volatile Logic Switch
title_full	First Demonstration of Ultra-low Dit Top-Gated Ferroelectric Oxide-Semiconductor Memtransistor with Record Performance by Channel Defect Self-Compensation Effect for BEOL-Compatible Non-Volatile Logic Switch
title_fullStr	First Demonstration of Ultra-low Dit Top-Gated Ferroelectric Oxide-Semiconductor Memtransistor with Record Performance by Channel Defect Self-Compensation Effect for BEOL-Compatible Non-Volatile Logic Switch
title_full_unstemmed	First Demonstration of Ultra-low Dit Top-Gated Ferroelectric Oxide-Semiconductor Memtransistor with Record Performance by Channel Defect Self-Compensation Effect for BEOL-Compatible Non-Volatile Logic Switch
title_sort	first demonstration of ultra-low dit top-gated ferroelectric oxide-semiconductor memtransistor with record performance by channel defect self-compensation effect for beol-compatible non-volatile logic switch
publisher	2022 International Electron Devices Meeting (IEDM)
publishDate	2023
url	https://scholarbank.nus.edu.sg/handle/10635/238259
_version_	1761781111971643392

First Demonstration of Ultra-low Dit Top-Gated Ferroelectric Oxide-Semiconductor Memtransistor with Record Performance by Channel Defect Self-Compensation Effect for BEOL-Compatible Non-Volatile Logic Switch

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