First Demonstration of Ultra-low Dit Top-Gated Ferroelectric Oxide-Semiconductor Memtransistor with Record Performance by Channel Defect Self-Compensation Effect for BEOL-Compatible Non-Volatile Logic Switch
10.1109/IEDM45625.2022.10019440
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| Main Authors: | , , , , , , , , , |
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| Other Authors: | |
| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2022 International Electron Devices Meeting (IEDM)
2023
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| Online Access: | https://scholarbank.nus.edu.sg/handle/10635/238259 |
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| Institution: | National University of Singapore |
| Language: | English |