First Demonstration of Ultra-low Dit Top-Gated Ferroelectric Oxide-Semiconductor Memtransistor with Record Performance by Channel Defect Self-Compensation Effect for BEOL-Compatible Non-Volatile Logic Switch

First Demonstration of Ultra-low Dit Top-Gated Ferroelectric Oxide-Semiconductor Memtransistor with Record Performance by Channel Defect Self-Compensation Effect for BEOL-Compatible Non-Volatile Logic Switch

10.1109/IEDM45625.2022.10019440

Saved in:
Bibliographic Details
Main Authors: Chun-Kuei Chen, Zihang Fang, Sonu Hooda, Manohar Lal, Umesh Chand, Zefeng Xu, Jieming Pan, Shih-Hao Tsai, Evgeny Zamburg, Aaron Voon-Yew Thean
Other Authors: DEPT OF ELECTRICAL & COMPUTER ENGG
Format: Conference or Workshop Item
Language:English
Published: 2022 International Electron Devices Meeting (IEDM) 2023
Online Access:https://scholarbank.nus.edu.sg/handle/10635/238259
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: National University of Singapore
Language: English
Be the first to leave a comment!
You must be logged in first

Similar Items