Anneal-Free HZO-Based Ferroelectric Field-Effect Transistor for Back-End-of- Line-Compatible Monolithic 3D Integration

Anneal-Free HZO-Based Ferroelectric Field-Effect Transistor for Back-End-of- Line-Compatible Monolithic 3D Integration

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Bibliographic Details
Main Authors: Tsai Shih-Hao, Chun-Kuei Chen, WANG XINGHUA, UMESH CHAND, SONU DEVI, Evgeny Zamburg, THEAN VOON YEW, AARON
Other Authors: DEAN'S OFFICE (ENGINEERING)
Format: Conference or Workshop Item
Published: 2022
Online Access:https://scholarbank.nus.edu.sg/handle/10635/224456
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Institution: National University of Singapore

Internet

https://scholarbank.nus.edu.sg/handle/10635/224456

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