FABRICATION AND CHARACTERIZATION OF FERROELECTRIC HF0.5ZR0.5O2 THIN FILMS
Master's
Saved in:
Main Author: | WU YICHEN |
---|---|
Other Authors: | MATERIALS SCIENCE AND ENGINEERING |
Format: | Theses and Dissertations |
Language: | English |
Published: |
2023
|
Subjects: | |
Online Access: | https://scholarbank.nus.edu.sg/handle/10635/245832 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Language: | English |
Similar Items
-
Programmable ferroelectricity in Hf0.5Zr0.5O2 enabled by oxygen defect engineering
by: Shao, Minghao, et al.
Published: (2024) -
Ferroelectricity and ferroelectric resistive switching in sputtered Hf0.5Zr0.5O2 thin films
by: Fan, Zhen, et al.
Published: (2016) -
A van der Waals Synaptic Transistor Based on Ferroelectric Hf0.5Zr0.5O2 and 2D Tungsten Disulfide
by: Li Chen, et al.
Published: (2023) -
Structural properties and dopant-modified bandgap energies of Ba 0.5Sr0.5TiO3 thin films grown on LaAlO 3 substrates
by: Zheng, Y.B., et al.
Published: (2014) -
The effect of post-annealing on the structure and magnetotransport properties of Pr0.5Sr0.5MnO3 thin film
by: Chen, L, et al.
Published: (2020)