Shared-Write-Channel-Based Device for High-Density Spin-Orbit-Torque Magnetic Random-Access Memory

Shared-Write-Channel-Based Device for High-Density Spin-Orbit-Torque Magnetic Random-Access Memory

10.1103/PhysRevApplied.15.024063

محفوظ في:
التفاصيل البيبلوغرافية
المؤلفون الرئيسيون: Rahul Mishra, Taehwan Kim, Jongsun Park, Hyunsoo Yang
مؤلفون آخرون: ELECTRICAL AND COMPUTER ENGINEERING
التنسيق: مقال
منشور في: 2024
الوصول للمادة أونلاين:https://scholarbank.nus.edu.sg/handle/10635/249144
الوسوم: إضافة وسم
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spelling sg-nus-scholar.10635-2491442024-11-13T13:22:03Z Shared-Write-Channel-Based Device for High-Density Spin-Orbit-Torque Magnetic Random-Access Memory Rahul Mishra Taehwan Kim Jongsun Park Hyunsoo Yang ELECTRICAL AND COMPUTER ENGINEERING 10.1103/PhysRevApplied.15.024063 Physical Review Applied 15 2 2024-07-16T00:24:42Z 2024-07-16T00:24:42Z 2021-02-25 Article Rahul Mishra, Taehwan Kim, Jongsun Park, Hyunsoo Yang (2021-02-25). Shared-Write-Channel-Based Device for High-Density Spin-Orbit-Torque Magnetic Random-Access Memory. Physical Review Applied 15 (2). ScholarBank@NUS Repository. https://doi.org/10.1103/PhysRevApplied.15.024063 2331-7019 https://scholarbank.nus.edu.sg/handle/10635/249144 CC0 1.0 Universal http://creativecommons.org/publicdomain/zero/1.0/
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
description 10.1103/PhysRevApplied.15.024063
author2 ELECTRICAL AND COMPUTER ENGINEERING
author_facet ELECTRICAL AND COMPUTER ENGINEERING
Rahul Mishra
Taehwan Kim
Jongsun Park
Hyunsoo Yang
format Article
author Rahul Mishra
Taehwan Kim
Jongsun Park
Hyunsoo Yang
spellingShingle Rahul Mishra
Taehwan Kim
Jongsun Park
Hyunsoo Yang
Shared-Write-Channel-Based Device for High-Density Spin-Orbit-Torque Magnetic Random-Access Memory
author_sort Rahul Mishra
title Shared-Write-Channel-Based Device for High-Density Spin-Orbit-Torque Magnetic Random-Access Memory
title_short Shared-Write-Channel-Based Device for High-Density Spin-Orbit-Torque Magnetic Random-Access Memory
title_full Shared-Write-Channel-Based Device for High-Density Spin-Orbit-Torque Magnetic Random-Access Memory
title_fullStr Shared-Write-Channel-Based Device for High-Density Spin-Orbit-Torque Magnetic Random-Access Memory
title_full_unstemmed Shared-Write-Channel-Based Device for High-Density Spin-Orbit-Torque Magnetic Random-Access Memory
title_sort shared-write-channel-based device for high-density spin-orbit-torque magnetic random-access memory
publishDate 2024
url https://scholarbank.nus.edu.sg/handle/10635/249144
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