Shared-Write-Channel-Based Device for High-Density Spin-Orbit-Torque Magnetic Random-Access Memory

Shared-Write-Channel-Based Device for High-Density Spin-Orbit-Torque Magnetic Random-Access Memory

10.1103/PhysRevApplied.15.024063

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Bibliographic Details
Main Authors: Rahul Mishra, Taehwan Kim, Jongsun Park, Hyunsoo Yang
Other Authors: ELECTRICAL AND COMPUTER ENGINEERING
Format: Article
Published: 2024
Online Access:https://scholarbank.nus.edu.sg/handle/10635/249144
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Institution: National University of Singapore
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