Method to fabricate a double-polysilicon gate structure for a sub-quarter micron self-aligned-titanium silicide process
US6180501
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| Main Authors: | , , |
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| Other Authors: | |
| Format: | Patent |
| Published: |
2012
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| Online Access: | http://scholarbank.nus.edu.sg/handle/10635/32585 |
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| Institution: | National University of Singapore |