Method to form shallow trench isolation structures for borderless contacts in an integrated circuit

Method to form shallow trench isolation structures for borderless contacts in an integrated circuit

US6225225

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Bibliographic Details
Main Authors: GOH, KENNY HUA KOOI, CHAN, LAP, YAP, KOK SIONG
Other Authors: CENTRE FOR WIRELESS COMMUNICATIONS
Format: Patent
Published: 2012
Online Access:http://scholarbank.nus.edu.sg/handle/10635/32590
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/32590

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