Method of fabricating group-III nitride-based semiconductor device

US6524932

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Bibliographic Details
Main Authors: ZHANG, XIONG, CHUA, SOO JIN
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Patent
Published: 2012
Online Access:http://scholarbank.nus.edu.sg/handle/10635/32630
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Institution: National University of Singapore
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Summary:US6524932