Method of fabricating group-III nitride-based semiconductor device
US6524932
Saved in:
Main Authors: | ZHANG, XIONG, CHUA, SOO JIN |
---|---|
Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Patent |
Published: |
2012
|
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/32630 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
OPTICAL CHARACTERIZATION OF WIDE ENERGY AGP GROUP III-NITRIDE SEMICONDUCTORS
by: LIU WEI
Published: (2020) -
MOCVD growth and characterization of wide band gap group III-nitride semiconductors
by: LI PENG
Published: (2010) -
Method for fabricating semiconductor devices with shallow diffusion regions
by: TAN, DEXTER XUEMING, et al.
Published: (2012) -
Method for fabricating semiconductor devices with reduced junction diffusion
by: COLOMBEAU, BENJAMIN, et al.
Published: (2012) -
Movpe growth and characterization of dilute III-(III)-V-nitride semiconductor : ingapn on gaas
by: Dares Kaewket
Published: (2013)