Thermally stable fully silicided Hf silicide metal gate electrode
US20060273410A1
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sg-nus-scholar.10635-349332024-11-14T01:24:51Z Thermally stable fully silicided Hf silicide metal gate electrode PARK, CHANG SEO CHO, BYUNG JIN ELECTRICAL & COMPUTER ENGINEERING NATIONAL UNIVERSITY OF SINGAPORE US20060273410A1 Published Application 2012-10-08T08:22:56Z 2012-10-08T08:22:56Z 2006-12-07 Patent PARK, CHANG SEO,CHO, BYUNG JIN (2006-12-07). Thermally stable fully silicided Hf silicide metal gate electrode. ScholarBank@NUS Repository. http://scholarbank.nus.edu.sg/handle/10635/34933 NOT_IN_WOS PatSnap |
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ELECTRICAL & COMPUTER ENGINEERING |
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ELECTRICAL & COMPUTER ENGINEERING PARK, CHANG SEO CHO, BYUNG JIN |
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PARK, CHANG SEO CHO, BYUNG JIN |
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PARK, CHANG SEO CHO, BYUNG JIN Thermally stable fully silicided Hf silicide metal gate electrode |
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PARK, CHANG SEO |
title |
Thermally stable fully silicided Hf silicide metal gate electrode |
title_short |
Thermally stable fully silicided Hf silicide metal gate electrode |
title_full |
Thermally stable fully silicided Hf silicide metal gate electrode |
title_fullStr |
Thermally stable fully silicided Hf silicide metal gate electrode |
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Thermally stable fully silicided Hf silicide metal gate electrode |
title_sort |
thermally stable fully silicided hf silicide metal gate electrode |
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2012 |
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http://scholarbank.nus.edu.sg/handle/10635/34933 |
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