Thermally stable fully silicided Hf silicide metal gate electrode

US20060273410A1

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Main Authors: PARK, CHANG SEO, CHO, BYUNG JIN
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Patent
Published: 2012
Online Access:http://scholarbank.nus.edu.sg/handle/10635/34933
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Institution: National University of Singapore
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spelling sg-nus-scholar.10635-349332024-11-14T01:24:51Z Thermally stable fully silicided Hf silicide metal gate electrode PARK, CHANG SEO CHO, BYUNG JIN ELECTRICAL & COMPUTER ENGINEERING NATIONAL UNIVERSITY OF SINGAPORE US20060273410A1 Published Application 2012-10-08T08:22:56Z 2012-10-08T08:22:56Z 2006-12-07 Patent PARK, CHANG SEO,CHO, BYUNG JIN (2006-12-07). Thermally stable fully silicided Hf silicide metal gate electrode. ScholarBank@NUS Repository. http://scholarbank.nus.edu.sg/handle/10635/34933 NOT_IN_WOS PatSnap
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
description US20060273410A1
author2 ELECTRICAL & COMPUTER ENGINEERING
author_facet ELECTRICAL & COMPUTER ENGINEERING
PARK, CHANG SEO
CHO, BYUNG JIN
format Patent
author PARK, CHANG SEO
CHO, BYUNG JIN
spellingShingle PARK, CHANG SEO
CHO, BYUNG JIN
Thermally stable fully silicided Hf silicide metal gate electrode
author_sort PARK, CHANG SEO
title Thermally stable fully silicided Hf silicide metal gate electrode
title_short Thermally stable fully silicided Hf silicide metal gate electrode
title_full Thermally stable fully silicided Hf silicide metal gate electrode
title_fullStr Thermally stable fully silicided Hf silicide metal gate electrode
title_full_unstemmed Thermally stable fully silicided Hf silicide metal gate electrode
title_sort thermally stable fully silicided hf silicide metal gate electrode
publishDate 2012
url http://scholarbank.nus.edu.sg/handle/10635/34933
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