High Performance Lateral Phase Change Random Access Memory

High Performance Lateral Phase Change Random Access Memory

Ph.D

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Bibliographic Details
Main Author: YANG HONGXIN
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Theses and Dissertations
Language:English
Published: 2013
Subjects:
phase change, memory, lateral PCRAM, failure analysis, superlattice-like medium, multi-level
Online Access:http://scholarbank.nus.edu.sg/handle/10635/36574
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Institution: National University of Singapore
Language: English

Internet

http://scholarbank.nus.edu.sg/handle/10635/36574

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