High Performance Lateral Phase Change Random Access Memory
Ph.D
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2013
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sg-nus-scholar.10635-365742015-01-07T16:55:56Z High Performance Lateral Phase Change Random Access Memory YANG HONGXIN ELECTRICAL & COMPUTER ENGINEERING CHONG TOW CHONG SHI LUPING phase change, memory, lateral PCRAM, failure analysis, superlattice-like medium, multi-level Ph.D DOCTOR OF PHILOSOPHY 2013-03-31T18:02:27Z 2013-03-31T18:02:27Z 2012-11-12 Thesis YANG HONGXIN (2012-11-12). High Performance Lateral Phase Change Random Access Memory. ScholarBank@NUS Repository. http://scholarbank.nus.edu.sg/handle/10635/36574 NOT_IN_WOS en |
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National University of Singapore |
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NUS Library |
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Singapore |
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ScholarBank@NUS |
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English |
topic |
phase change, memory, lateral PCRAM, failure analysis, superlattice-like medium, multi-level |
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phase change, memory, lateral PCRAM, failure analysis, superlattice-like medium, multi-level YANG HONGXIN High Performance Lateral Phase Change Random Access Memory |
description |
Ph.D |
author2 |
ELECTRICAL & COMPUTER ENGINEERING |
author_facet |
ELECTRICAL & COMPUTER ENGINEERING YANG HONGXIN |
format |
Theses and Dissertations |
author |
YANG HONGXIN |
author_sort |
YANG HONGXIN |
title |
High Performance Lateral Phase Change Random Access Memory |
title_short |
High Performance Lateral Phase Change Random Access Memory |
title_full |
High Performance Lateral Phase Change Random Access Memory |
title_fullStr |
High Performance Lateral Phase Change Random Access Memory |
title_full_unstemmed |
High Performance Lateral Phase Change Random Access Memory |
title_sort |
high performance lateral phase change random access memory |
publishDate |
2013 |
url |
http://scholarbank.nus.edu.sg/handle/10635/36574 |
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1681081682935939072 |