Extending Si CMOS: InGaAs and GeSn High Mobility Channel Transistors for Future High Speed and Low Power Applications

Ph.D

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Bibliographic Details
Main Author:	GONG XIAO
Other Authors:	NUS GRAD SCH FOR INTEGRATIVE SCI & ENGG
Format:	Theses and Dissertations
Language:	English
Published:	2013
Subjects:	InGaA, GeSn, high mobility channels, N-MOSFETs, P-MOSFETs, CMOS
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/38840
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Institution:	National University of Singapore
Language:	English

id	sg-nus-scholar.10635-38840
record_format	dspace
spelling	sg-nus-scholar.10635-388402015-01-08T01:57:08Z Extending Si CMOS: InGaAs and GeSn High Mobility Channel Transistors for Future High Speed and Low Power Applications GONG XIAO NUS GRAD SCH FOR INTEGRATIVE SCI & ENGG YEO YEE CHIA InGaA, GeSn, high mobility channels, N-MOSFETs, P-MOSFETs, CMOS Ph.D DOCTOR OF PHILOSOPHY 2013-06-30T18:03:16Z 2013-06-30T18:03:16Z 2013-01-25 Thesis GONG XIAO (2013-01-25). Extending Si CMOS: InGaAs and GeSn High Mobility Channel Transistors for Future High Speed and Low Power Applications. ScholarBank@NUS Repository. http://scholarbank.nus.edu.sg/handle/10635/38840 NOT_IN_WOS en
institution	National University of Singapore
building	NUS Library
country	Singapore
collection	ScholarBank@NUS
language	English
topic	InGaA, GeSn, high mobility channels, N-MOSFETs, P-MOSFETs, CMOS
spellingShingle	InGaA, GeSn, high mobility channels, N-MOSFETs, P-MOSFETs, CMOS GONG XIAO Extending Si CMOS: InGaAs and GeSn High Mobility Channel Transistors for Future High Speed and Low Power Applications
description	Ph.D
author2	NUS GRAD SCH FOR INTEGRATIVE SCI & ENGG
author_facet	NUS GRAD SCH FOR INTEGRATIVE SCI & ENGG GONG XIAO
format	Theses and Dissertations
author	GONG XIAO
author_sort	GONG XIAO
title	Extending Si CMOS: InGaAs and GeSn High Mobility Channel Transistors for Future High Speed and Low Power Applications
title_short	Extending Si CMOS: InGaAs and GeSn High Mobility Channel Transistors for Future High Speed and Low Power Applications
title_full	Extending Si CMOS: InGaAs and GeSn High Mobility Channel Transistors for Future High Speed and Low Power Applications
title_fullStr	Extending Si CMOS: InGaAs and GeSn High Mobility Channel Transistors for Future High Speed and Low Power Applications
title_full_unstemmed	Extending Si CMOS: InGaAs and GeSn High Mobility Channel Transistors for Future High Speed and Low Power Applications
title_sort	extending si cmos: ingaas and gesn high mobility channel transistors for future high speed and low power applications
publishDate	2013
url	http://scholarbank.nus.edu.sg/handle/10635/38840
_version_	1681081995904417792

Extending Si CMOS: InGaAs and GeSn High Mobility Channel Transistors for Future High Speed and Low Power Applications

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